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 MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4)
Mechanical Data
* * * * * * * * *
SOT-23
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
G
Source
S
Equivalent Circuit
TOP VIEW
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID Value 60 60 20 40 500 800 Units V V V mA
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 1)
Thermal Characteristics
Total Power Dissipation (Note 1)
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 300 1.80 417 -55 to +150 Units mW mW/C K/W C
Characteristic
Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss ton toff Min 60 0.8 80 Typ 70 2.1 22 11 2.0 Max 1.0 10 3.0 5.0 5.3 40 30 5.0 10 10 Unit V A nA V mS pF pF pF ns ns Test Condition VGS = 0V, ID = 100A VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA VDS =10V, ID = 0.2A
VDS = 10V, VGS = 0V, f = 1.0MHz
VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBF170
Document number: DS30104 Rev. 10 - 2
1 of 3 www.diodes.com
June 2008
(c) Diodes Incorporated
MMBF170
1.0 ID, DRAIN-SOURCE CURRENT (A)
7 6 5 4 3 2 1 0 0
0.8
0.6
0.4
0.2
0 0 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 5
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 0.2
1.0
2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
6
5
1.5
4
1.0
3
2
0.5
1
0 -55
70 95 -30 -5 20 45 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature
0 0
2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage
400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0
50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 5 Max Power Dissipation vs. Ambient Temperature 0 25
MMBF170
Document number: DS30104 Rev. 10 - 2
2 of 3 www.diodes.com
June 2008
(c) Diodes Incorporated
MMBF170 Ordering Information
Part Number MMBF170-7-F
Notes:
(Note 5) Case SOT-23 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K6Z
Date Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
YM
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
Package Outline Dimensions
A
TOP VIEW
BC
G H K M
J
D
F
L
SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z G C
Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
MMBF170
Document number: DS30104 Rev. 10 - 2
3 of 3 www.diodes.com
June 2008
(c) Diodes Incorporated


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